GaAs MESFET interface considerations
- 1 May 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (5) , 1001-1007
- https://doi.org/10.1109/t-ed.1987.23036
Abstract
Various properties of GaAs MESFET's are discussed in terms of the basic physics of interfaces and deep levels. Fermi-level pinning is shown to lead to hole injection from a positively biased metal lying in direct contact with semi-insulating GaAs. This hole injection is partially responsible for low-frequency oscillations in GaAs MESFET's. Backgating and low-frequency oscillations are shown to be a direct consequence of the peculiar nature of the channel-substrate interface. This interface is discussed within the framework of a three-level model.Keywords
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