Resist Modeling Near Resolution And Sensitivity Limits In X -Ray Lithography

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Abstract
The impact of statistical fluctuations due to the finite number of quanta absorbed during the exposure of high �speed X � ray photoresists on photoresist development and lithographic structure transfer is examined. Evidence for percolation processes during photoresist development is provided, and theoretical models are presented in the form of a Monte � Carlo type computer experiment, and a statistical analysis of surface clusters by means of a simple continuous � space percolation model. Finally achievable structure transfer is analyzed in terms of the optical and statistical components of the normalized process parameter NPL.

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