Lateral HVIC with 1200-V bipolar and field-effect devices
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (12) , 1992-2001
- https://doi.org/10.1109/t-ed.1986.22858
Abstract
The 1200-V blocking capability of lateral high-voltage devices has been achieved through theoretical and experimental investigation. The feasibility of a 1200-V lateral n-p-n bipolar junction transistor, p-n diode, and lateral DMOSFET has been demonstrated for the first time. The on-resistance of the 1200-V DMOSFET is 4 times less than its 1200-V n-p-n BJT counterpart. The major contribution to high BJT on-resistance comes from the series JFET pinch resistance.Keywords
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