X-band TRAPATT amplifiers
- 7 July 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (14) , 416-418
- https://doi.org/10.1049/el:19770303
Abstract
A 2-stage, class-C. X-band pulsed trapatt amplifier has been demonstrated, giving a maximum gain of 9·5 dB over a 1 dB bandwidth of 200 MHz at a centre frequency of 9.4GHz. The trapatt diodes have a silicon p+–n–n+ structure with silver integral heatsinks and gold-button heat reservoirs. Single-stage amplifiers have been operated with input pulse widths of 0·5 μs and gains of 5 dB, with 11%3 dB bandwidths centred at 9·2 GHz.Keywords
This publication has 0 references indexed in Scilit: