Interaction of Na with sexithiophene thin films
- 15 March 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (12) , 7299-7304
- https://doi.org/10.1103/physrevb.57.7299
Abstract
The effects of Na on the electronic structure and electrical properties of α-sexithiophene are investigated with electron spectroscopic methods under UHV conditions. A shift of the valence-band edge away from the Fermi level, and the evolution of states in the gap, can be determined. In a classical band-structure picture this could be explained as an -type doping process. However, all results point at a high localization of the negative charge at the sulfur atom which is reflected in a very low specific conductivity.
Keywords
This publication has 20 references indexed in Scilit:
- Highly ordered ultra-thin α5-thiophene films on SiO2 and Si(100) + O(N2O)Synthetic Metals, 1994
- All-Polymer Field-Effect Transistor Realized by Printing TechniquesScience, 1994
- Oriented growth of quinquethiophene on SiO2—An atomic force microscopy studyAdvanced Materials, 1994
- Undoped and Doped Oligothiophenes: an In‐situ XPS‐, UPS‐, and HREELS‐StudyBerichte der Bunsengesellschaft für physikalische Chemie, 1993
- Didodecylsexithiophen ‐ Modellverbindung für die Erzeugung und Charakterisierung von Ladungsträgern in konjugierten KettenAngewandte Chemie, 1993
- Stoichiometric control of the successive generation of the radical cation and dication of extended α-conjugated oligothiophenes: a quantitative model for doped polythiopheneSynthetic Metals, 1990
- Polaron and bipolaron formation on isolated model thiophene oligomers in solutionSynthetic Metals, 1990
- Solitons in conducting polymersReviews of Modern Physics, 1988
- Solitons in polyacetyleneAdvances in Physics, 1987
- Molecular Spectroscopy by Means of ESCA II. Sulfur compounds. Correlation of electron binding energy with structurePhysica Scripta, 1970