Nonequilibrium screening of the photorefractive effect
- 21 August 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (8) , 891-894
- https://doi.org/10.1103/physrevlett.63.891
Abstract
The nonequilibrium occupation of multiple defect states in inhomogeneously illuminated crystals is demonstrated to have dramatic and previously unexpected consequences for the photorefractive behavior of electro-optic semiconductors. By using a simple screening formalism, we show for the first time that the standard photorefractive effect can be partially or entirely quenched. This nonequilibrium screening is observed in the thermally stimulated relaxation of diffraction efficiencies in four-wave mixing experiments performed on semi-insulating InP.Keywords
This publication has 12 references indexed in Scilit:
- Material Demands for Optical Neural NetworksMRS Bulletin, 1988
- Simultaneous electron/hole transport in photorefractive materialsJournal of Applied Physics, 1986
- Hole–electron competition in photorefractive gratingsOptics Letters, 1986
- Altering the photorefractive properties of BaTiO_3 by reduction and oxidation at 650°CJournal of the Optical Society of America B, 1986
- center: A configurationally bistable defect in InP: FePhysical Review B, 1984
- Holographic grating formation in photorefractive crystals with arbitrary electron transport lengthsJournal of Applied Physics, 1979
- Phase-conjugate wavefront generation via real-time holography in Bi_12SiO_20 crystalsOptics Letters, 1979
- Control of the Susceptibility of Lithium Niobate to Laser-Induced Refractive Index ChangesApplied Physics Letters, 1971
- ELECTRON DIFFUSION EFFECTS DURING HOLOGRAM RECORDING IN CRYSTALSApplied Physics Letters, 1971
- Optically Induced Change of Refractive Indices in LiNbO3 and LiTaO3Journal of Applied Physics, 1969