Transport properties of liquid-phase epitaxial Hg1−xCdxTe n/p structures

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Abstract
We report Hall‐effect results of controlled Hg‐diffused n regions on as‐grown, p‐type liquid‐phase epitaxial Hg0.8Cd0.2Te, for varying diffusion times. The Hall‐effect results of Hg diffusion through CdTe passivation layers of varying thickness for fixed time on as‐grown p‐type Hg0.8Cd0.2Te are also reported. From additional measurements of the electrical properties for the n‐ and p‐type cases, the Hall data are analyzed in terms of the two‐layer model [R. L. Petritz, Phys. Rev. 1 1 0, 1254 (1958)]. From this analysis, junction depth is estimated for a variety of experimental diffusion conditions using a fitting procedure in conjuction with a theoretical transport model. The fitting procedure results are verified by differential Hall measurements and also compared to diffusion theory [R. B. Allen, H. Bernstein, and A. D. Kurtz, J. Appl. Phys. 3 1, 334 (1960)]. The sensitivity of determining junction depth to errors in estimates of the donor and acceptor concentration, and mobility within each layer, are discussed.