Variation of lattice parameters with growth conditions in GaN
- 16 October 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 61 (2) , 493-496
- https://doi.org/10.1002/pssa.2210610221
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Variation of lattice parameters in GaN with stoichiometry and dopingPhysical Review B, 1979
- Nachweis von Stapelfehlern in GaN‐Epitaxieschichten mittels ElektronenbeugungCrystal Research and Technology, 1975
- New Set of Tetrahedral Covalent RadiiPhysical Review B, 1970
- Precision Lattice Constants from X-Ray Powder PhotographsReview of Scientific Instruments, 1935