Calculation of the Electronic Structure of Positive Muon and Boron at the Tetrahedral Interstitial Site in Silicon
- 1 March 1984
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 53 (3) , 1114-1121
- https://doi.org/10.1143/jpsj.53.1114
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Screening of impurities in semiconductors: Muonium in germanium, silicon, and diamondPhysical Review B, 1982
- Electronic structure of magnetic and non-magnetic substitutional 3d transition metal impurities in germaniumSolid State Communications, 1982
- Theory of substitutional and interstitialimpurities in siliconPhysical Review B, 1982
- Muonium in diamondPhysical Review A, 1982
- Theory of the silicon vacancy: An Anderson negative-systemPhysical Review B, 1980
- Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in siliconPhysical Review B, 1980
- Theory of the hydrogen interstitial impurity in germaniumPhysical Review B, 1979
- Muonium, hydrogen, and such in Si and GeHyperfine Interactions, 1979
- AnomalousPrecession in SiliconPhysical Review Letters, 1973
- Muonium in Silicon and Germanium—a Deep DonorPhysical Review B, 1973