Photovoltaic Effect inJunctions
- 1 July 1954
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 95 (1) , 16-21
- https://doi.org/10.1103/physrev.95.16
Abstract
The relations between the incoming radiant energy and the outgoing electrical energy are developed in terms of the experimentally measurable constants of the semiconducting material. These results are applied to germanium by making use of constants found in the literature. The high efficiencies calculated for power conversion are strong indication that the junction may be a practical device for the direct utilization of solar energy.
Keywords
This publication has 6 references indexed in Scilit:
- Effect of Nickel and Copper Impurities on the Recombination of Holes and Electrons in GermaniumThe Journal of Physical Chemistry, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Infrared Absorption in High Purity GermaniumJournal of the Optical Society of America, 1952
- Growth of Germanium Single Crystals ContainingJunctionsPhysical Review B, 1951
- Junctions Prepared by Impurity DiffusionPhysical Review B, 1950
- The Photon Yield of Electron-Hole Pairs in GermaniumPhysical Review B, 1950