Magnetic penetration depth in Ni- and Zn-doped ( films
- 1 April 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (14) , 9193-9198
- https://doi.org/10.1103/physrevb.51.9193
Abstract
The penetration depth λ(T) in ( films, with M=Ni or Zn and nominal concentrations, 0.02≤x≤0.06, is obtained from the mutual inductance of coaxial coils on opposite sides of the films. Both Ni and Zn increase λ(0) very rapidly, such that the superfluid density, (0)∝(0), decreases by a factor of 2 for each percent of dopant. The rapid increase in λ(0) implies that disorder fills in the superconducting density of states at low energy, so that (0) is roughly 80–95 % of the normal-state density of states. An analytic d-wave theory, valid at T=0, finds that λ(0) increases rapidly with disorder, but not as rapidly as observed. It is striking that the dependence of λ(T/) on T/ does not change significantly as x increases from 2% to 6%, although it is different from undoped films. An ad hoc phenomenological model finds that one should expect this result. Finally, the values of (0) deduced from λ are somewhat larger than values deduced from specific-heat measurements on Zn-doped , which also indicate increasing gaplessness with doping.
Keywords
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