THE ELECTRICAL RESISTIVITY OF ULTRA PURE ALUMINUM AT LOW TEMPERATURE

Abstract
High precision measurements of the temperature dependent part of the electrical resistivity ρ(T) of four aluminum samples, with residual resistivity ratios ranging from 9000 to 41000, are presented. They show that the presence of a AT2 term with A = 2.8 fΩmK-2, can clearly be established. Electron-phonon interaction gives a term in ρ(T) which approaches T5 for temperatures below 2 K

This publication has 0 references indexed in Scilit: