Interdiffusion of Titanium and Gold: A Comparison of Thin Films Deposited in Technical Vacuum and Ultrahigh Vacuum

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Abstract
Thin films of 0.5 μm Ti and 0.5 μm Au have been deposited on Si and substrates in technical vacuum (HV, ≤10−6 Torr) and ultrahigh vacuum (UHV, 10−9 Torr). After deposition and subsequent annealing in containing ≤1% at 300°–350°C, the films were analyzed, principally using Auger sputter ion profiling, but also using electrical resistivity, x‐ray, Rutherford backscattering, and SEM/microprobe measurements. While the UHV films were clean to the techniques used, several percent of C and O were present in the HV deposited Ti films. On substrates the reaction proceeded via formation of and oxidation of Ti to as it came in contact with the air interface. The rate of alloy formation was almost an order of magnitude faster in the UHV deposited films and the oxidation rate was also enhanced. The importance of these usually unmonitored impurities in determining the reactivity of films deposited in technical vacuum is stressed.

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