Aluminium-free GaAs/GaInAsP quantum well lasers

4 March 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (5) , 429-431
https://doi.org/10.1049/el:19930287

Abstract

Al-free GaAs/GaInAsP separate-confinement-heterostructure single-quantum-well lasers are reported. The laser structure was grown by gas-source molecular beam epitaxy. A low threshold current density of 207 A/cm² and a high characteristic temperature of 167 K were achieved for the uncoated broad-area lasers. The transparency current density was 58 A/cm² and gain coefficient 0.039 cm μm A⁻¹. The internal quantum efficiency and internal waveguide loss were 86% and 5.7 cm⁻¹, respectively. The results are comparable to those obtained for GaAs/AlGaAs quantum well lasers.

Keywords

167 K
GAS-SOURCE MOLECULAR BEAM EPITAXY
THRESHOLD CURRENT DENSITY
TRANSPARENCY CURRENT DENSITY
22 MA
CHARACTERISTIC TEMPERATURE
GAAS-GAINASP QUANTUM WELL LASERS
INTERNAL WAVEGUIDE LOSS
SEPARATE-CONFINEMENT-HETEROSTRUCTURE SINGLE-QUANTUM-WELL LASERS
GAIN COEFFICIENT
BROAD-AREA LASERS
0.87 MICRON
INTERNAL QUANTUM EFFICIENCY

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