Field inversion generated in the CMOS double-metal process due to PETEOS and SOG interactions
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (1) , 49-53
- https://doi.org/10.1109/16.249423
Abstract
Severe field inversion was observed in circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the intermetal dielectrics and PEOX/PECVD nitride as the passivation layer. The authors performed detailed studies and concluded that the field inversion is caused by the interaction between PETEOS and non-carbon-based SOG, triggered by the H+ released from PECVD nitride during the sintering. No field inversion was observed when PEOX/inorganic SOG/PEOX was used as the intermetal dielectrics. The effect of field inversion on the circuit yield is also discussedKeywords
This publication has 2 references indexed in Scilit:
- Field inversion in CMOS double metal circuits due to carbon based SOGsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An investigation of device instabilities arising from the encapsulation material and compositionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002