Multicarrier trapping by copper microprecipitates in silicon
- 26 June 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (26) , 3074-3077
- https://doi.org/10.1103/physrevlett.62.3074
Abstract
In a simple model based on the Schottky-Mott theory of metal-semiconductor contacts, a metallic precipitate in a semiconducting matrix has the properties of a multicarrier, amphoteric trap. A use is made of this model to analyze the trapping effects of copper-decorated twinned boundaries in silicon bicrystals. The model gives in particular a simple explanation for the emission properties of the boundary traps, as determined by deep-level-transient-spectroscopy experiments on the bicrystals.Keywords
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