Range parameters of heavy ions implanted into C films
- 1 June 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 33 (1-4) , 122-124
- https://doi.org/10.1016/0168-583x(88)90527-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Projected ranges and range stragglings of Au and Bi implanted into carbon films and into SiO2Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Large Z1-range effect for Eu, Yb and Au ions implanted in amorphized siliconRadiation Effects, 1985
- Evidence for an insulator—metal effect on the Z1 range oscillations in the nuclear stopping regimePhysics Letters A, 1982
- Effective stopping-power charges of swift ions in condensed matterPhysical Review B, 1982
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Z1-oscillations in low-energy heavy-ion rangesNuclear Instruments and Methods, 1980
- Ranges and range theoriesRadiation Effects, 1980