Two-port microwave amplification in long samples of gallium arsenide
- 1 September 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 14 (9) , 612-615
- https://doi.org/10.1109/T-ED.1967.16016
Abstract
Experiments on a new type of two-port, unilateral traveling-wave amplifier using subcritically doped GaAs specimens several space-charge wavelengths long are described. Net terminal gains of 2-4 dB are reported in the frequency range 700-1500 MHz. The gain is presently limited by inefficient coupling to the space-charge wave; the measured variation of phase delay between input and output terminals as a function of bias voltage is in good accord with theory, however.Keywords
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