Viable deep-submicron FD/SOI CMOS design for low-voltage applications
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Implantation and Activation of High Concentrations of Boron in GermaniumIEEE Transactions on Electron Devices, 2005
- Silicon-on-Insulator TechnologyPublished by Springer Nature ,1991