Some new experimental results of a study of metal-n-type semiconductor schottky barrier contacts
- 16 March 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 70 (1) , 311-316
- https://doi.org/10.1002/pssa.2210700136
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A modified forward I-U plot for schottky diodes with high series resistancePhysica Status Solidi (a), 1981
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979
- Role of oxygen in the mechanism of formation of Schottky diodesJournal of Applied Physics, 1978
- Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangementsJournal of Vacuum Science and Technology, 1977
- Theory of semiconductor surface states and metal–semiconductor interfacesJournal of Vacuum Science and Technology, 1976
- Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAsPhysical Review Letters, 1975
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942