Tunnelling through GaAs-Al _x Ga _{1−
x} As-GaAs double heterojunctions

21 January 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (2) , 85-87
https://doi.org/10.1049/el:19820059

Abstract

GaAs-Al_0.5Ga_0.5As-GaAs tunnel diodes have been achieved. Tunnel currents have been measured and compared to theoretical calculations based on WKB approximation.

Keywords

GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS
WENTZEL-KRAMER-BRILLOUIN APPROXIMATION
GAAS-AL0.5GA0.5AS-GAAS TUNNEL DIODES
III-V SEMICONDUCTORS

Tunnelling through GaAs-Al x Ga 1− x As-GaAs double heterojunctions

Abstract

Keywords

Tunnelling through GaAs-Al _x Ga _{1−
x} As-GaAs double heterojunctions