Dye laser selective spectroscopy in bulk-grown indium phosphide
- 28 December 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (24) , 5567-5575
- https://doi.org/10.1088/0022-3719/12/24/028
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Acceptor excited states in indium phosphideSolid State Communications, 1979
- InP growth and propertiesJournal of Electronic Materials, 1978
- Incorporation of Si in Liquid Phase Epitaxial InP LayersJournal of the Electrochemical Society, 1976
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Cubic contributions to the spherical model of shallow acceptor statesPhysical Review B, 1974
- Liquid Phase Epitaxy of InPJournal of the Electrochemical Society, 1974
- Far-infrared photoconductivity from the shallow donors in n-InPSolid State Communications, 1971
- Optical Properties of Excitons Bound to Neutral Acceptors in GaPPhysical Review B, 1971
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960
- The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957