Vapour growth mechanism of silicon layers by dichlorosilane decomposition
- 28 February 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 61 (1) , 102-110
- https://doi.org/10.1016/0022-0248(83)90286-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Kinetics of Silicon Growth under Low Hydrogen PressureJournal of the Electrochemical Society, 1978
- Deposition of Polycrystalline Silicon by Pyrolysis of Silane in ArgonJournal of the Electrochemical Society, 1975
- Two‐step catalytic reactionsAIChE Journal, 1972
- The Role of Homogeneous Reactions in Chemical Vapor DepositionJournal of the Electrochemical Society, 1971