The Transverse Magnetic Resistance in Semiconductors with Non‐Standard Energy Band
- 1 January 1968
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 28 (2) , 783-788
- https://doi.org/10.1002/pssb.19680280237
Abstract
The transverse electrical conductivity σxx in a strong magnetic field is calculated for semiconductors with spherical but nonparabolic energy band. The calculation is carried out for the case of electron scattering by acoustical phonons. In the quantum limit non‐degenerate and degenerate semiconductors are considered. It is shown that in the formula for the transverse electrical conductivity in the non‐degenerate case the effective mass at the bottom of the parabola shifted by the magnetic field and in the degenerate case the effective mass at the Fermi surface are included. The temperature dependence is the same as for a standard energy band. Therefore an assumed non‐parabolicity does not change the dependence of σxx on the electrical field. The effect of the non‐parabolicity is reduced to the above renormalization of the effective mass.Keywords
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