The use of process modelling for optimum design of reactive sputtering processes
- 15 December 1989
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 39-40, 465-474
- https://doi.org/10.1016/s0257-8972(89)80008-8
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- High-rate reactive sputter deposition of zirconium dioxideJournal of Vacuum Science & Technology A, 1988
- A physical model for eliminating instabilities in reactive sputteringJournal of Vacuum Science & Technology A, 1988
- Predicting thin-film stoichiometry in reactive sputteringJournal of Applied Physics, 1988
- Modeling of reactive sputtering of compound materialsJournal of Vacuum Science & Technology A, 1987
- Hysteresis effect in reactive sputtering: a problem of system stabilityJournal of Physics D: Applied Physics, 1986
- The use of nitrogen flow as a deposition rate control in reactive sputteringJournal of Vacuum Science & Technology A, 1986
- Partial pressure control of reactively sputtered titanium nitrideJournal of Vacuum Science & Technology A, 1985
- Reactive deposition of low loss Al2O3 optical waveguides by modified dc planar magnetron sputteringJournal of Vacuum Science & Technology A, 1984
- Mechanisms of voltage controlled, reactive, planar magnetron sputtering of Al in Ar/N2 and Ar/O2 atmospheresJournal of Vacuum Science & Technology A, 1984
- Effect of N2Ar mixing on the reactive sputtering characteristics of siliconThin Solid Films, 1983