High performance of AlGaInP/GaInP visible lasers by strain induced effects

24 October 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (22) , 2028-2030
https://doi.org/10.1049/el:19911256

Abstract

An AlGaInP/GaInP visible strained single quantum well (SSQW) laser has been investigated. In comparison with a conventional lattice-matched single quantum well (SQW) laser, it was found that a 25% increase in the differential gain coefficient β and a 60% decrease in the transparency current density J₀ have been obtained by incorporating a 0.65% compressive SSQW active layer structure.

Keywords

STRAINED SINGLE QUANTUM WELL LASER
SSQW
DIFFERENTIAL GAIN COEFFICIENT
TRANSPARENCY CURRENT DENSITY
VISIBLE LASERS
ALGAINP-GAINP
STRAIN INDUCED EFFECTS
SEMICONDUCTORS
COMPRESSIVE ACTIVE LAYER STRUCTURE

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