Lithium Diffusion and Heat Treatment of Tellurium-Doped n-GaSb
- 1 January 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (1) , 456-457
- https://doi.org/10.1063/1.1707881
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Ion-pairing between lithium and the residual acceptors in GaSbJournal of Physics and Chemistry of Solids, 1965
- Acceptors in Donor-Doped GaAs Resulting from Li DiffusionJournal of Applied Physics, 1963
- Behavior of selenium in gallium arsenideJournal of Physics and Chemistry of Solids, 1963
- Energy Band Structure of Gallium AntimonideJournal of Applied Physics, 1961
- Effect of Heat Treatment upon the Electrical Properties of Indium ArsenideJournal of Applied Physics, 1959