Second-harmonic generation from GaAs/AlAs vertical cavity
- 24 April 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (17) , 2159-2161
- https://doi.org/10.1063/1.113932
Abstract
We have demonstrated second‐harmonic generation in a GaAs/AlAs vertical cavity grown on a (311)B GaAs substrate. Second‐harmonic light of 492 nm was observed and its efficiency was measured to be 1.4×10−4 %/W. The cavity confines high intensity of fundamental field, resulting in efficient second‐harmonic generation. Quasiphase matching was realized with the stacked GaAs/AlAs layers inside the cavity, which was designed taking into account the strong absorption of second‐harmonic power in GaAs layers. We show that conversion efficiency of the GaAs/AlAs vertical cavity could be more than 10%/W if the optimization is completed.Keywords
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