Contrast Enhanced UV Lithography With Polysilanes
- 21 May 1984
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0469, 108-117
- https://doi.org/10.1117/12.941784
Abstract
Contrast enhanced lithography has been been applied to mid-uv projection lithography with a new class of CEL materials, polysilanes. The nonlinear bleaching photochemistry of polysilanes provides a unique "bleaching latency" for contrast enhanced lithography. SAMPLE resist exposure and development simulation is compared with experimental CEL resist images using AZ2400® photoresist. The contrast enhancement gained with the use of polysilanes is examined as a function of exposure dose, image size, and contrast enhancement film thickness.Keywords
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