On the Electrical and Thermal Properties of the Ternary Chalcogenides A2 IBIVX3, AIBVX2 and A3 IBVX4 (AI=Cu; BIV=Ge, Sn; BV=Sb; X=S, Se, Te) II. Electrical and Thermal Properties of Cu3SbSe4

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Abstract
Electrical and thermal conductivity and Hall, Seebeck and transverse Nernst-Ettings-hansen effects have been measured over the temperature range from 100°K to 500°K on Cu3SbSe4. From the temperature dependence of the Hall coefficient, the electron to hole mobility ratio is estimated to be about three. Temperature dependences of the resistivity and the Hall coefficient give an estimate of 0.13 eV for the energy gap at 0°K. The infrared transmission spectra at room temperature also showed a threshold of absorption at about 0.11 eV of photon energy. From the Seebeck coefficient data, the effective mass of holes is calculated to be 0.73 m0. The scattering parameter is determined to be zero over the temperature range studied which is the value expected for acoustic mode lattice scattering. The lattice thermal conductivity varies with temperature as T-1. The dimensionless thermoelectric figure of merit, ZT, is evaluated as a function of temperature and the reduced Fermi level.