Hall studies on encapsulated CdSe films
- 15 September 1968
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 46 (18) , 1993-2000
- https://doi.org/10.1139/p68-544
Abstract
A technique for encapsulating CdSe films to obtain the flat band condition at the semiconductor surface is discussed and the results of Hall studies on suitably encapsulated films are presented. Results obtained with these films are consistent with a crystallite–grain-boundary model, where the mobility is limited by intercrystalline barriers, when the carrier concentration is not too large.Keywords
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