Formation of B2-centres during ion irradiation of SiOX layers
- 16 December 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 62 (2) , K169-K174
- https://doi.org/10.1002/pssa.2210620261
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- VIBRATIONAL AND ELECTRONIC SPECTROSCOPY OF ION-IMPLANTATION- INDUCED DEFECTS IN FUSED SILICA AND CRYSTALLINE QUARTZPublished by Elsevier ,1978
- Effects of stoichiometry on the radiation response of SiO2IEEE Transactions on Nuclear Science, 1974
- Stoichiometry of thin silicon oxide layers on siliconApplied Physics Letters, 1974
- Ion-Implantation Effects in Noncrystalline SiO2IEEE Transactions on Nuclear Science, 1973
- Parallel between Surface States at the Si–SiO2 Interface and the B2 Center in Irradiated SiO2Journal of Vacuum Science and Technology, 1972
- Production and Annealing of Color Centers in rf Sputtered SiO2 FilmsJournal of Applied Physics, 1971
- Optical properties of non-crystalline Si, SiO, SiOx and SiO2Journal of Physics and Chemistry of Solids, 1971
- CXI. The optical effects of radiation induced atomic damage in quartzPhilosophical Magazine, 1956