Dielectric Constant of GaP at 1.6°K
- 15 December 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 188 (3) , 1254-1256
- https://doi.org/10.1103/physrev.188.1254
Abstract
A comparison of observed and calculated line positions in a donor-acceptor pair spectrum yields a value of for the GaP static dielectric constant at 1.6°K. Earlier analyses of pair spectra assumed , the value obtained from Raman-scattering measurements at 300°K. The new value of necessitates a small revision in the ionization energies of some donors and acceptors.
Keywords
This publication has 12 references indexed in Scilit:
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Donor and Acceptor Multipole Fields and Their Effects in GaPPhysical Review B, 1969
- Multipole Field Effects in Donor-Acceptor Spectra of GaPPhysical Review Letters, 1968
- Optical Properties of the Group IV Elements Carbon and Silicon in Gallium PhosphideJournal of Applied Physics, 1968
- Infrared Donor-Acceptor Pair Spectra Involving the Deep Oxygen Donor in Gallium PhosphidePhysical Review B, 1968
- Dielectric Dispersion and Phonon Line Shape in Gallium PhosphidePhysical Review B, 1968
- Thermal Expansion Coefficients and Lattice Parameters between 10° and 65°C in the System GaP-GaAsJournal of the Electrochemical Society, 1967
- Measurement of the Refractive Indices of Several CrystalsJournal of Applied Physics, 1965
- Pair Spectra in GaPPhysical Review Letters, 1963
- Dielectric constant of germanium and silicon as a function of volumeJournal of Physics and Chemistry of Solids, 1959