DC and RF performance of 0.1 mu m gate length Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As pseudomorphic HEMTs

Publisher Website

6 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 180-183
https://doi.org/10.1109/iedm.1988.32784

Abstract

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Keywords

This publication has 3 references indexed in Scilit:

AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies
IEEE Electron Device Letters, 1988
Advances in HEMT Technology and Applications
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
An In_0.15Ga_0.85As/GaAs pseudomorphic single quantum well HEMT
IEEE Electron Device Letters, 1985