Boron-induced reconstructions of Si(001) investigated by scanning tunneling microscopy

1 May 1995

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 13 (3) , 1431-1437
https://doi.org/10.1116/1.579682

Abstract

The local geometric and electronic structures of boron-induced reconstructions produced by thermal decomposition of diborane and decaborane on Si(001) have been investigated using scanning tunneling microscopy (STM). STM images show that boron induces several related reconstructions arising from ordered arrangements of simple structural subunits. These boron-induced atomic rearrangements order even at very low boron exposures, leading to a striking spatial segregation of boron on the surface. Similar reconstructions are observed using diborane and decaborane as boron precursors. Annealing at 1000 K for 90 s substantially improves the surface ordering, without significant diffusion of boron from the surface to the bulk.

Keywords

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