Lumped DC–50 GHz amplifier using InP/InGaAsHBTs
- 7 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (1) , 53-55
- https://doi.org/10.1049/el:19990003
Abstract
A direct-coupled, lumped broadband amplifier utilising InP/InGaAs single heterojunction bipolar transistors (SHBTs) is presented. The achieved –3 dB bandwidth is 50 GHz with a DC gain of 9.8 dB and a gain peak of only 1.2 dB. This is the largest bandwidth reported for InP/InGaAs HBT amplifiers with such a flat gain curve.Keywords
This publication has 2 references indexed in Scilit:
- Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Broadband feedback amplifiers withAlInAs/GaInAs transferred-substrate HBTElectronics Letters, 1998