Internal reflection infrared spectroscopy for chemical analysis of surfaces and thin films
- 31 March 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (3) , 231-238
- https://doi.org/10.1016/0038-1101(92)90227-4
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- A Surface Infrared Study of the Liquid Methanol‐Gallium Arsenide InterfaceJournal of the Electrochemical Society, 1990
- The study of the thermal oxide films on silicon wafers by Fourier transform infrared attenuated total reflection spectroscopyJournal of Applied Physics, 1990
- Infrared Characterization of Interface State Reduction by F2 Treatment in SiO2/Si Structure using Photo-CVD SiO2 FilmJapanese Journal of Applied Physics, 1990
- In-situ infrared study of the silicon surface in HF electrolyteJournal of Electron Spectroscopy and Related Phenomena, 1990
- Infrared spectroscopy of thin silicon dioxide on siliconApplied Physics Letters, 1988
- Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphologyApplied Physics Letters, 1988
- Surface infrared spectroscopySurface Science Reports, 1988
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986
- Differential reflection spectroscopy of very thin surface filmsSurface Science, 1971
- Infrared Spectra of Monolayers on Metal MirrorsJournal of the Optical Society of America, 1959