Zn-Implanted GaAs with minimized annealing redistribution
- 1 October 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (10) , 356-357
- https://doi.org/10.1109/EDL.1983.25761
Abstract
Redistribution associated with the annealing of high-dose Zn implants has been investigated in GaAs. Annealing times as short as ∼ 1 s have been implemented through direct radiant heating from an incoherent light source. It is shown that Zn can redistribute to depths of ∼ 1 µm even on annealing for only 10 s. Shallower layers (∼ 0.25 µm) and close to anticipated As-implanted depths require a further reduction in the annealing time to ∼ 1 s.Keywords
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