Si/SiGe resonant tunnelling devices separated by surrounding polysilicon
- 17 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (17) , 1169-1171
- https://doi.org/10.1049/el:19890784
Abstract
A novel design for Si/SiGe double-barrier resonant tunnelling devices is presented. The active, monocrystalline zone is embedded in polycrystalline material. The poly region consists of the same layer sequence as the active region. Both regions are deposited simultaneously by means of so-called differential molecular beam epitaxy. The I/V curve of the novel device shows a strong and a weak resonance at about 330 and 95 mV, respectively. The poly embedment can be applied as an in situ deposited separation.Keywords
This publication has 1 reference indexed in Scilit:
- Characterization of MBE-Grown PolysiliconSpringer Proceedings in Physics, 1989