Deep level formation and band bending at metal/CdTe interfaces
- 1 May 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 6 (3) , 1579-1583
- https://doi.org/10.1116/1.575330
Abstract
We present depth resolved photoluminescence and soft x-ray photoemission spectra of cleaved (110) CdTe interfaces with Au and In measured as a function of thermal and laser annealing. These techniques reveal Fermi-level positions at the processed interfaces which are clustered around discrete energies, which in turn coincide with the energies of deep levels produced by interdiffusion and reaction at metal/CdTe interfaces.Keywords
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