Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga1-xInxAsyP1-y Alloy System
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4R)
- https://doi.org/10.1143/jjap.25.568
Abstract
The effect of alloy scattering on the electron and hole impact ionization rates, α and β in the Ga1-x In x As y P1-y alloy system lattice-matched to InP substrates is analyzed. A Monte Carlo simulation shows that the experimental α and β values in GaInAsP are very well explained by introducing alloy scattering, which greatly reduces α and β in the alloy system. This indicates that alloy scattering must be taken into account in estimating or deriving ionization rates in an alloy semiconductor.Keywords
This publication has 24 references indexed in Scilit:
- Impact ionization coefficients of electrons and holes inIEEE Journal of Quantum Electronics, 1985
- Alloy clustering and its effect on impact ionization in ternary III–V compoundsSolid-State Electronics, 1982
- Alloy scattering and high field transport in ternary and quaternary III–V semiconductorsSolid-State Electronics, 1978
- Scattering of Electrons by Potential Clusters in Ternary Alloy SemiconductorJapanese Journal of Applied Physics, 1976
- Scattering probabilities for holes. II. Polar optical scattering mechanismPhysica Status Solidi (b), 1973
- Scattering Probabilities for Holes I. Deformation Potential and Ionized Impurity Scattering MechanismsPhysica Status Solidi (b), 1973
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Zur Elektronentheorie der Metalle. IAnnalen der Physik, 1931
- Zur Elektronentheorie der Metalle. IIAnnalen der Physik, 1931