Growth and Properties of β-SiC Single Crystals
- 1 January 1966
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (1) , 333-336
- https://doi.org/10.1063/1.1707837
Abstract
Chemical, electrical, and optical measurements were performed on n‐ and p‐type β‐silicon carbide crystals grown from pure or doped carbon‐saturated silicon melts. Pure, transparent yellow crystals showed no detectable impurities and had carrier concentrations in the range of 1016 cm−3. Extensive twinning was observed. Uncorrected electron mobilities of 700–1000 cm2/V·sec were measured at room temperature. Intense injection electroluminescence, peaking at 2.28 eV and 2.0 eV, was observed in many diodes. Strong photoluminescence was observed in aluminum‐doped crystals at 77°K and at room temperature when irradiated with uv light.This publication has 1 reference indexed in Scilit:
- Anomalous Mobility Effects in Some Semiconductors and InsulatorsJournal of Applied Physics, 1962