Linear tunable resistance circuit using gallium arsenide MESFETs
- 11 April 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (8) , 655-657
- https://doi.org/10.1049/el:19910411
Abstract
Designs for linearised, linearly tunable grounded and floating resistance circuits using GaAs depletion-mode MESFETs are presented. Simulations confirm good linearity and admittance characteristics up to 10 GHz. Applications include tunable filters, oscillators and high-precision amplifier loads.Keywords
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