We present two-dimensional strain image mapping of the SiO2/Si interface on an Al/SiO2 patterned Si wafer using a modified Raman microscope. A positive shift in the Si Raman peak by approximately 1.0 cm−1, corresponding to 2.49×108 Pa compressive strain, was observed along particular edges between the Al/SiO2 patterned features and bare Si substrate. In addition to strain mapping, surface disorder in the Si wafer was also detected with this technique.