NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON

Publisher Website

26 June 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 509-512
https://doi.org/10.1109/iedm.2002.1175891

Abstract

No abstract available

This publication has 2 references indexed in Scilit:

Bias temperature instability in scaled p/sup +/ polysilicon gate p-MOSFET's
IEEE Transactions on Electron Devices, 1999
The effect of fluorine in silicon dioxide gate dielectrics
IEEE Transactions on Electron Devices, 1989