Schottky barrier on n-GaAs formed by amorphous tungsten silicide
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 90 (1) , 347-350
- https://doi.org/10.1016/s0022-3093(87)80442-8
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Capacitance–voltage characterization of silicide–GaAs Schottky contactsJournal of Vacuum Science & Technology B, 1985