Ultrathin Reoxidized Nitrided Oxide Prepared by Rapid Isothermal Processing for Advanced MOS Devices

6 April 1990

proceedings article
Published by SPIE-Intl Soc Optical Eng

p. 176-185
https://doi.org/10.1117/12.963969

Abstract

Deep-submicron MOSFET's require ultrathin (-.._ lOnm) gate dielectrics satisfying high performance and high reliability simultaneously. This paper proposes (reoxidized) nitrided oxides prepared by rapid isothermal processing (RIP) as a replacement of conventional gate-Si02 and investigates the physical properties, defect-charge densities, TDDB reliability, MOSFET performance, and hot-carrier reliability. In contrast with popularly heavy nitridations, light nitridation combined with the subsequent reoxidation improves reliability significantly, while achieving device performance comparable or superior to that of SiO2. An ultrathin (reoxidized) nitrided oxide prepared by RIP is most promising as the gate dielectric of deep-submicron MOSFET's in place of thermal SiO2.

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