Effect of B-site cation stoichiometry on electrical fatigue of RuO2//Pb(ZrxTi1−x)O3//RuO2 capacitors
- 15 January 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (2) , 1013-1016
- https://doi.org/10.1063/1.360888
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Ferroelectric-CMOS Nonvolatile Memory DevelopmentPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Electrical characterization of sol-gel derived PZT thin filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Electrode effects on electrical properties of ferroelectric thin filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Phase evolution and annealing effects on the electrical properties of Pb(Zr0.53Ti0.47)O3 thin films with RuO2 electrodesThin Solid Films, 1995
- Contribution of electrodes and microstructures to the electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitorsJournal of Materials Research, 1994
- The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel ProcessingMRS Proceedings, 1994
- Fatigue of ferroelectric PbZrxTiyO3 capacitors with Ru and RuOx electrodesJournal of Materials Research, 1993
- The dependence of ferroelectric and fatigue behaviors of PZT films on annealing conditionsIntegrated Ferroelectrics, 1992
- Fatigue Parameters of Lead Zirconate Titanate Thin FilmsMRS Proceedings, 1991
- Spectroscopic and Microstructural Characterization of Solution Chemistry Effects in Pzt Thin Film ProcessingMRS Proceedings, 1991