Interfacial defects in silicides on Si(100): ‘‘Coreless defects,’’ 1/12〈111〉 dislocations, and twinning mechanisms
- 15 April 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (8) , 4064-4066
- https://doi.org/10.1063/1.352829
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A transmission electron microscopic study of the topography of clean Si(111) surfacesJournal of Vacuum Science & Technology B, 1990
- Topography of the Si(111) surface during silicon molecular-beam epitaxyPhysical Review Letters, 1989
- Crystallography of domain formation and dislocations in bilayers and multilayersCritical Reviews in Solid State and Materials Sciences, 1989
- ‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin filmsApplied Physics Letters, 1988
- The atomic structure of the NiSi2-(001)Si interfacePhilosophical Magazine A, 1984