Effect of B2H6 profile on the performance of a-Si:H p-i-n solar cells
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 1155-1158
- https://doi.org/10.1016/0022-3093(83)90372-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effect of boron doping and its profile on characteristics of p-i-n a-Si:H solar cellsSolar Energy Materials, 1983
- Model for Localized States Distribution and Light Dependent Effects in Amorphous Silicon Solar CellsJapanese Journal of Applied Physics, 1981
- Schottky-barrier characteristics of metal–amorphous-silicon diodesApplied Physics Letters, 1976